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Sub-100nm NMOSFET the channel inversion layer quantum effect of

We can see that increasing the threshold voltage of greater than 10%. Therefore, the quantum effects caused by the device threshold voltage fluctuation is the key factor in the design. 4 Conclusion and outlook paper analyzes the sub 100nmNMOS devices quantum channel inversion layer effects. Conclusion. Inversion layer quantum effect resulting in the inversion layer off the surface electron distribution. Effective gate oxide thickness causes the increase, also causing the threshold voltage fluctuations. This sub-100nmCMOS analysis and design of the device is not be ignored. In the 90nm technology node and 65nmCMOS by quantum effects into account in the design parameters of the device under the conditions. Can still use the traditional bulk silicon CMOS device physics theory device design and analysis. 6,[link widoczny dla zalogowanych], however. As device feature sizes decrease CMOSIC. Bound to the traditional MOSFET to its physical limits. Present. On the one hand. Improve the small scale of the new structure of MOS transistor devices. Such as SOI, double gate MOS, etc., in a bid to replace a smaller conventional CMOS technology node status; on the other hand. Quantum transport mechanism of solid-state quantum electronics devices, including resonant tunneling devices, single electron devices, nanowire field-effect transistors and other so-called nano electronic devices. Experimental and theoretical studies show that to some extent be able to go beyond the traditional CMOS integrated circuit device performance. In the process of development. There are also integrated in the traditional IC quantum devices in the successful examples. Research in this area can lead to learning electronics from microelectronics smooth transition. References ��1�� GeraldMarcyk, SiliconTechnology: ScalingfortheSecondHalfoftheDecade. [link widoczny dla zalogowanych] com / labs ��2�� InternationalTechnologyRoadmapforSemiconductors (SemiconductorIndustryAssociation,[link widoczny dla zalogowanych], SanJose, CA, 2001); [link widoczny dla zalogowanych] itrs. net /. ��3�� (U.S.) JerroldH. Krenz was. Maai Wen, Xia Zhao, Peng force of translation, Electronic Principles ��M��: Introduction. Beijing: Electronic Industry Press, 2002. ��4�� K. Goser, P. Glosekotter, J. Dienstuhl, NanoelectonicsandNanosystems: FromTransistorstoMolecularandQuantumDevices [M]. Germany. Springer-VerlagBerlinHeidelberg2004. ��5�� B. H. Koh. W. K. Chim. eta1. QuantumMechanicalModelingofGateCapacitanceandGateCurrentinTunnelDielectricStackStmcturesforNonvlatileMem. oryApplication [J]. JournalofAppliedPhysics,[link widoczny dla zalogowanych], 2004,95 (9) :5094-5103. ��6�� FrankStem, Self-ConsistentResultsforn-typeSiInversionLayers�� J. PhysicalReviewB, 1972, \��7�� Y. Taur, D. A. Buchanan, WeiChen, eta1. CMOSScalingintotheNanometerRegime�� J. ProceedingsoftheIEEE, 1997,85 (4) :486-504. About He Yongning (1971 a), female, Han nationality,[link widoczny dla zalogowanych], Shaanxi Fuping people, Xi'an Jiaotong University, Institute of Electronic and Information Engineering Department of Electronic Science and Technology, Lecturer, Doctor. Mainly engaged in nano-electronic materials and devices in teaching and research. Zhu Chang-chun. Professor, incumbent telecommunications, Xi'an Jiaotong University School of vacuum microelectronics and micro electro-mechanical Institute. Micro-Nano Center of Xi'an Jiaotong University. Microelectronics professionals engaged in teaching and research.

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